The Plasma-Therm Corial 210IL Cl-Based ICP RIE is an etching system with chlorinated and fluorinated reactive gases. These gases allow this tool to etch a wide array of materials which are listed below. Additionally, this system is equipped with a load lock and a wide range chiller/heater.
Substrate Size: small pieces – 8” wafers
Substrate Material: III-V Materials
Temperature: -30 °C to 150 °C
ICP Power: 2000W, 2MHz RF generator
RIE (Bias) Power: 1000W, 13.56MHz RF generator
Working Pressure: 5 – 50 mTorr
He Backside Cooling Pressure: 5 Torr
Available Gases: BCl3, Cl2, SiCl4, CH4, H2, SF6, O2, and Ar
Coming Soon: PlasmaTherm RIE Standard Operating Procedure
