Heidelberg2 MLA150 Maskless Lithography System (newer)

The new Heidelberg MLA150 (2) at AggieFab provides high-resolution, maskless photolithography for rapid prototyping, multilayer fabrication, high-aspect-ratio structures, and other advanced microfabrication applications. This new system features dual-wavelength exposure at 375 nm and 405 nm, backside alignment capability, and an optimized optical configuration for high aspect ratio lithography.

Basic features:

Laser wavelength: 375 nm, 405 nm
- 375 nm laser – suitable for a broad range of UV-sensitive photoresists, including SU-8 and nLOF 2020.
- 405 nm laser – suitable for photoresists such as S1805, S1818, and AZP4620.
- The 405 nm exposure option can provide significantly shorter exposure times for compatible photoresists.
Minimum feature size: 1 µm
Substrate size: 5 × 5 mm to 200 × 200 mm
Substrate thickness: 0.1 mm to 12 mm
Photomask size capability: Up to 8 inches
Accepted file formats: GDSII, DXF, CIF, Gerber
Global 2nd layer alignment (3σ, nm): 500 nm
Local 2nd layer alignment (3σ, nm): 100 nm
Photomask availability: 4″, 5″ and 7″ blank photomasks are available for purchase through AggieFab staff.

Additional feature:

Backside Alignment: The MLA150 is equipped with backside alignment capability, enabling alignment to features or structures on the backside of the substrate.
High Aspect Ratio Lithography: In HAR mode, the numerical aperture is reduced to increase the depth of field, making the mode suitable for relatively thick photoresist layers and high aspect ratio structures.

General Resources:

Heidelberg2 MLA150 Standard Operating Procedure

Laser Safety Classification at AggieFab

Resists Available at AggieFab for MLA150:

Resist	Typical Use
Shipley 1805	Thin positive photoresist
Shipley 1818	Standard positive photoresist
AZ 5214	Image reversal or positive tone
AZ nLOF 2000	Negative photoresist
AZ P4620	Thick positive photoresist (e.g., for DRIE)
LOR 3A	For bi-layer lift-off processing