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You are here: Home / Equipment / MTI Annealing Furnaces

MTI Annealing Furnaces

MTI D4

MTI D2 D4 1024x768

The MTI RTP (B2 on schematic) is a compact rapid thermal processing tube furnace that is designed for annealing wafers coated with metallic films and metal samples up to 1000°C.

Tube: 4” O.D. quartz tube

Maximum Temperature: 1000°C (for <10/min)

Working Temperature: 400°C (continuous), 600°C (< 1 hour)

Suggested Normal Heating Rate: 10-25°C /sec

Maximum Heating Rate: 50°C /sec

Constant Temperature zone: 4″ (+/-1°C) @ 1000°C

Please use the iLab system to schedule time to use this equipment.

MTI D3

MTI RTP OTF-1200X Rapid Thermal Processing Anneal Furnace

The MTI furnace (B3 on schematic) is a compact rapid thermal processing tube furnace that is designed for annealing wafers coated with metals and metal samples up to 1200°C.

Tube: 2” O.D. quartz tube

Maximum Temperature: 1200°C (for <1 hour)

Continuous Working Temperature: 1000°C

Suggested Normal Heating Rate: ≤10°C /min

Maximum Heating Rate: 40°C /min (low temp) and 10°C /min (high temp)

Constant Temperature zone: 2.3″ (60mm) (+/-1°C) @ 900°C

Please use the iLab system to schedule time to use this equipment.

MTI D2

MTI D2 D4 1024x768

The MTI RTP is a compact rapid thermal processing tube furnace that is designed for annealing semiconductor wafers and wafers coated with insulating films (not metals), such as SiO and SiN, up to 1000°C.

Installation in progress

Tube: 4” O.D. quartz tube

Maximum Temperature: 1000°C (for <10/min)

Working Temperature: 400°C (continuous), 600°C (< 1 hour)

Suggested Normal Heating Rate: 10-25°C /sec

Maximum Heating Rate: 50°C /sec

Constant Temperature zone: 4″ (+/-1°C) @ 1000°C

Please use the iLab system to schedule time to use this equipment.

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