The Oxford Plasmalab 100 is an Inductive Coupled Plasma Reactive Ion Etching (ICP RIE) tool. It is a multipurpose fluorocarbon-based system that provides users anisotropic etching of silicon, silicon oxide, and other dielectric materials. High etch rates are achieved by the presence of high ion and radical densities.
Wafer size: up to 4”
Temperature: -100 °C to 400 °C
Power: 400 W 13.56 MHz RF generator
ICP power: 200 – 2500 W
Total gas flow: 10 – 150 sccm
Pressure: 20 – 2000 mTorr
Helium backside cooling
Helium pressure: 0 – 30 Torr
Available gases: SF6, CHF3, He, Ar, and O2
Please use the iLab system to schedule time to use this equipment.