The Oxford Plasmalab 100 ICP RIE is a plasma processing system to carry out Inductive Coupled Plasma Reactive Ion Etching (ICP RIE). High etch rates are achieved by high ion and radical density.
Wafer size: up to 4”
Temperature: -100 °C to 400 °C
Power: 400 W 13.56 MHz RF generator
ICP power: 200 – 2500 W
Total gas flow: 10 – 150 sccm
Pressure: 20 – 2000 mTorr
Helium backside cooling
Helium pressure: 0 – 30 Torr
Available gases: SF6, CHF3, He, Ar, O2
Please use the iLab system to schedule time to use this equipment.