The TESCAN MIRA3 is a FE-SEM equipped with electrostatic blanker and DrawBeam software in order to write features on photoresist in few tens of nanometer.
Wafer Size: up to 20x20mm
Source: Schottky Field Emission Gun
Acceleration voltage: 0.2-30 kV
Minimum electron beam spot size: ~ 2.5 nm
Minimum Electron beam current: ~10 pA
Import formats: GDSII and CAD
Please use the iLab system to schedule time to use this equipment.
