The TESCAN MIRA3 is a FE-SEM equipped with electrostatic blanker and DrawBeam software in order to write features on photoresist with dimensions of a few tens of nanometers.
Wafer Size: up to 20×20 mm
Source: Schottky Field Emission Gun
Acceleration voltage: 0.2-30 kV
Minimum electron beam spot size: ~ 2.5 nm
Minimum Electron beam current: ~10 pA
Import formats: GDSII and CAD
**Note** that AggieFab provides the following resists for use in the Tescan for ebeam lithography: S950 PMMA A4 and 494 PMMA A4.
AggieFab provides the following developers and strippers:
TMAH 25% in water
AZ 400T stripper
AZ developer 1:1
AZ 300 MIF developer
AZ 726 MIF developer
AggieFab also provides DisCharge EBL anti-charging agent:
Please use the iLab system to schedule time to use this equipment.