Low Pressure Chemical Vapor Deposition (LPCVD) system is being used to deposit high and low-temperature silicon oxide and low-stress silicon nitride
Tube 1: Low stress NH3, Dichlorosilane (DCS) Silicon Nitride deposition up to 900C
Tube 3: Low temperature O2, Silane (4% SiH4/Argon) Silicon Oxide deposition up to 700C
