The Tystar Low Pressure Chemical Vapor Deposition (LPCVD) system is used to deposit high- and low-temperature silicon oxide and low-stress silicon nitride
Tube 1: NH3 and Dichlorosilane (DCS) are used to deposit low-stress Silicon Nitride up to 900C
Tube 3: O2 and Silane (4% SiH4/Argon) are used to deposit low-temperature Silicon Oxide up to 700C
