The Plasma-Therm Corial 210IL F-Based ICP RIE is an etching system with fluorinated reactive gases. These gases allow this tool to etch a few very common materials. Additionally, this system is equipped with a load lock and a wide range chiller/heater.
Substrate Size: small pieces – 8” wafers
Substrate Material: Si, SiO2, and SiN
Temperature: -30 °C to 150 °C
ICP Power: 2000W, 2MHz RF generator
RIE (Bias) Power: 300W, 13.56MHz RF generator
Working Pressure: 5 – 50 mTorr
He Backside Cooling Pressure: 5 Torr
Available Gases: C4F8, SF6, CF4, CHF3, O2, Ar, and N2
Plasma-Therm Corial F-Based ICP RIE Standard Operating Procedure
