The SPTS Xactix e2 XeF2 is a highly selective etching system that can achieve selectivity of over 1000:1 between Si/photoresist, Si/SiO2 and Si/SiN making it ideal for etching sacrificial layers in MEMS devices. This tool is capable of continuous and pulsed gas flow allowing for a wide range of process options, all while operating at room temperature with no plasma.
- Substrate Size: Up to 6″ wafers
- Isotropic Etch Materials: Si, Mo, Ge, W, C
Coming Soon: SPTS XeF2 Etcher Standard Operating Procedure
