The G&P POLI-400L CMP Tool is designed for automatic chemical mechanical polishing of semiconductor samples and wafers. Chemical mechanical polishing is widely used in semiconductor manufacturing to achieve precise surface planarization and highly uniform material removal. The system supports polishing of 4″ and 6″ wafers, making it suitable for research, process development, and small-scale fabrication environments. Equipped with friction force and temperature monitoring, the tool allows users to track key process conditions during polishing.
The easily replaceable upper platen helps maximize pad usage and supports quick process changes between applications such as metal and oxide polishing. A membrane-type polishing head provides uniform pressure distribution across the sample surface for improved polishing consistency. Adjustable platen and polishing head speeds provide process flexibility across a range of CMP applications. The polishing head oscillation function improves polishing uniformity and supports stable, repeatable process results.
A swing-arm conditioner is included to help maintain pad surface condition and support consistent polishing performance. The tool is well suited for CMP applications requiring controlled material removal, surface planarization, and repeatable wafer processing.
- Substrate Size: 4″ and 6″ wafers
- Platen Speed: 30 – 200 rpm
- Polishing Head Speed: 30 – 200 rpm
- Polishing Head Pressure: 70 – 500 g/cm2
- Polishing Head Oscillation: ±12 mm
- Conditioner: Swing arm
