The Oxford Plasmalab80Plus is used to conduct plasma enhanced chemical vapor deposition (PECVD) of high-quality amorphous Si, SiOx, SiNx, and SiOxNy for a wide range of applications including photonics structures, passivation layers, and hard masks.
Wafer size: up to 8”
Temperature: up to 400°C
Power: 300W 13.56MHz RF generator
Available gases: SiH4, NH3, N2O, N2, O2, and CF4
Total gas flow: 150 – 3000 sccm
Pressure: 200 – 2000 mTorr
Oxford PECVD Plasmalab 80Plus Standard Operating Procedure
Oxford PECVD Process Monitor Data
Please use the iLab system to schedule time to use this equipment.
