The Tystar Low Pressure Chemical Vapor Deposition (LPCVD) system is used to deposit high- and low-temperature silicon oxide and low-stress silicon nitride. This is a batch process that can process up to 26 2″-4″ wafers at one time.
For 4″ wafers, the low temperature SiO2 dep rate is 6nm/min to 7nm/min with a uniformity of 85-90%. The low stress SiN dep rate is approximately 3.7nm/min to 4nm/min with a uniformity of 95%.
Tube 1: NH3 and Dichlorosilane (DCS) are used to deposit low-stress Silicon Nitride up to 900C
Tube 3: O2 and Silane (4% SiH4/Argon) are used to deposit low-temperature Silicon Oxide up to 700C
Tystar Tytan Standard Operating Procedure
