The ASM P8200/P3000 Atomic Layer Deposition (ALD) tool is used to deposit various advanced high-k dielectric materials (hafnium oxide and hafnium silicate), high-k dielectric capping layers for metal gate work function tuning, high-speed aluminum oxide, conformal passivation layers, and high-k dielectric materials for micro-electrical mechanical systems (MEMS) applications.
Wafer size: up to 8”
Solid or liquid source delivery with precise control over conversion of solid to gas to be delivered to the reactor
Laminar gas flow
Isothermal reactor
Installed and provided precursors: TMA (for Al2O3) and TiCl4 (for TiO2)
Available gases: N2 and Ar
Please use the iLab system to schedule time to use this equipment.
ASM P8200/P3000 Atomic Layer Deposition (ALD) Standard Operating Procedure
