The ASM P8200/P3000 Atomic Layer Deposition (ALD) uses Atomic Layer Deposition (ALD) to deposit various high-k dielectric materials required for advanced high-k gate dielectrics (hafnium oxide, hafnium silicate); high-k capping layers for metal gate work function tuning; high-speed aluminum oxide; conformal passivation layers; and high-k for MEMS application.
Wafer size: up to 8”
Solid source delivery with precise control over conversion of solid to gas to be delivered to the reactor
Laminar gas flow
Available gases: N2, Ar