The Oxford Plasmalab80Plus (RIE) is a plasma processing system to carry out reactive ion etching (RIE) of dielectric materials (SiO2, SiNx, etc.) and silicon-based materials (Si, a-Si, poly-Si).
Wafer size: up to 8”
Temperature: up to 400°C
Power: 300 W 13.56 MHz RF generator
Available gases: Ar, N2, O2, CF4
Total gas flow: 10 – 150 sccm
Pressure: 200 – 2000 mTorr
Please use the iLab system to schedule time to use this equipment.