Installation Ongoing
The STS ICP RIE is a high density plasma reactive ion etcher which is used for anisotropic high aspect ratio deep trench etching in silicon.
Wafer size: up to 4”
Load-locked chamber
Power: 400 W 13.56 MHz RF generator
ICP power: 20 – 2500 W
Helium backside cooling
Available gases: SF6, CHF3, C2F6, He, Ar, O2
